Answers are grounded in this paper and cite their sources.
Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 mum with room-temperature continuous-wave (CW) output power of 600 mW and peak power-conversion efficiency of 10% were designed and fabricated. The devices employed 470-nm-wide AlGaInAsSb waveguide optimized for improved device differential gain. CW threshold current density about 100 A/cm2per QW and slope efficiency of 150 mW/A were demonstrated at 16degC.
No takes yet. Share an insight, caveat, or question.
Chen et al. (2009) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: