I n s i t u Schottky contacts to molecular-beam epitaxially grown gallium antimonide

Rectifying contacts have been made by depositing epitaxial films of aluminum on both homo- and heteroepitaxial layers of n-type GaSb grown by molecular-beam epitaxy. The barrier heights determined from the current-voltage and capacitance-voltage characteristics of these contacts were 0.54 and 0.56 eV, respectively. The significance of these results is briefly discussed.