Two methods have been developed for analyzing MOS transients. One method is analytical and uses the quasi-static approximation. It is useful when the stray capacitance dominates MOS transient performance. The second method is numericaf and uses a new boundary value method which can be applied over a wide range of operating speeds. This method includes secondary effects and nonuniform doping. The validity and Iimits for both methods are verified by comparison with measurements. Transit-time delay and charge-pumping effects are also analyzed using the numerical method. Examples of short-channel behavior of MOS devices are included.
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Oh et al. (1980) studied this question.
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