Influence of surface defects on the electrical behavior of aluminum-porous silicon junctions

Using transient-current measurements on porous silicon layers made on p+ silicon substrate, we characterize the surface defects of the porous silicon material, i.e., the defects located at the interface between porous silicon and a thin layer of native oxide. An energy location near midgap (these defects can be efficient radiative lifetime killers) and a trap concentration in close agreement with the number of trivalent silicon defects—as measured by electron spin resonance—are deduced.