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For the first time, a new re-engineered polarized capacitor architecture for high energy density storage is demonstrated. Thin charge blocking layers are introduced at the electrode/dielectric interfaces. The insertion of these blocking layers leads to a likely reduction of charge injection into the dielectric material and a more than 200 V μm−1 increase in the electric field breakdown of the dielectric.
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Joyce et al. (2016) studied this question.
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