Modeling the functioning of semiconductor devices taking into account defects in the atomic structure

The paper studies the testing of modern numerical methods for studying the electrophysical characteristics of semiconductor devices. Using the diffusion-drift model, the electrophysical characteristics of the selected transistor are calculated. An original program code was also developed for modeling ballistic electron transport in nanotransistors (topological dimensions of ~10 nm) taking into account defects in the atomic structure. Modeling the characteristics of a field-effect nanotransistor showed that a violation of the crystal structure of the transistor leads to degradation of the I–V curve.