We have studied inelastic electron tunneling spectroscopy (IETS) in silicon metal-oxide-semiconductor systems with HfO2 and aluminum-doped HfO2 (HfAlO) as gate dielectrics. Samples with a thermal SiO2 layer (∼2 nm) were used to obtain reference spectra for the study. Information on chemical bonding structures and compositions of ultrathin HfO2 and HfAlO has been revealed by the IETS data. The bias polarity dependence of IETS has enabled differentiation of microstructures either near the gate electrode interface or near the silicon substrate interface.
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He et al. (2003) studied this question.
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