Mg is diffused into Al x Ga1-x As layers at 785°C from a Ga solution containing 0.1 wt% Mg and saturated with As. Secondary ion mass spectroscopy and differential Hall measurement reveal that the depth profile consists of a high-Mg-concentration region near the surface and a lower-concentration plateau inside. Diffusion into GaAs, Al0.5Ga0.5As, and Al0.7Ga0.3As for 20 min results in diffusion fronts at about 2, 4, and 6 µm from the surface. The depth with a fixed hole concentration varies in proportion to the square root of the diffusion time both in GaAs and Al0.35Ga0.65As.
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Mukai et al. (1989) studied this question.
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