A commercially available metalorganic compound, namely Bis (2,2,6,6-tetramethyl-3, 5-heptanedionato)(1,5-cyclooctadiene)Ruthenium, or Ru(THD)2COD was evaluated for growth, nanostructure, and conformality of ruthenium films using a manufacturable, liquid-source metalorganic chemical vapor deposition technique. The deposition of Ru films (60–200 nm) was carried out on various substrates at a temperature (Tsub) of 250–320 °C via the oxygen-assisted pyrolysis of Ru(THD)2COD. In the kinetically controlled regime, the activation energy for the deposition of Ru on amorphous-HfO2/SiO2/Si was 136 kJ/mol. However, at Tsub>290 °C, the nearly temperature-independent growth rate was indicative of the mass-transport controlled regime. The as-deposited Ru films exhibited dense and polycrystalline grain structure, with a moderate preference for the (001) orientation. X-ray photoelectron spectroscopy revealed the presence of RuO2 in metallic Ru films deposited at a Tsub as low as 260 °C. In addition, high-resolution transmission electron microscopy showed amorphous grain boundaries in Ru films and a disorder interface layer between Ru and HfO2 surface. The Ru films, however, were electrically conductive (27 μΩ cm). In addition, Ru films deposited on patterned TiN/Si substrates in the kinetically controlled regime at 250 °C exhibited nearly 100% step coverage.
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Dey et al. (2003) studied this question.
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