InP/InGaAsSb double heterojunction bipolar transistors (DHBTs) with an Au subcollector were fabricated on a SiC substrate by using a wafer bonding technique. The thermal resistance (Rth) of a fabricated DHBT with a 0.35 × 8.0 μm emitter is 62% lower than that of a DHBT with the same epitaxial layer structure on an InP substrate. Thanks to the lower Rth, the DHBT operates at a collector current density (JC) of over 25 mA/μm2without any lowering of current gain. The DHBT exhibits a record ftof 695 GHz at Jcof 21 mA/μm2owing to the reduced emitter charging time by suppressing the Kirk effect.
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Shiratori et al. (2018) studied this question.
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