Spintronics aims to exploit the spin degree of freedom in solid state devices data storage and information processing technologies. The fundamental device concepts such as creation, manipulation and detection of spin has been demonstrated in semiconductors and spin transistor using both the electrical and optical methods. However, an unsolved in the field is the realization of all electrical methods to control spin polarization and spin transistor operation at ambient temperature. For purpose, two-dimensional (2D) crystals offer a unique platform due to remarkable and contrasting spintronic properties, such as weak spin-orbit (SOC) in graphene and strong SOC in molybdenum disulfide (MoS₂). we combine graphene and MoS₂ in a van der Waals heterostructure to the electric control of the spin polarization and spin lifetime, and a spin field-effect transistor (spin-FET) at room temperature in a-local measurement geometry. We observe electrical gate control of the spin signal due to pure spin transport and Hanle spin precession signals in graphene channel in proximity with MoS₂ at room temperature. We show this unprecedented control over the spin polarization and lifetime stems the gate-tuning of the Schottky barrier at the MoS₂/graphene interface MoS₂ channel conductivity leading to spin interaction with high SOC. The all-electrical creation, transport and control of the spin in a spin-FET device at room temperature is a substantial step in field of spintronics. It opens a new platform for the interplay of spin, and orbital degrees of freedom for testing a plethora of exotic physical, which can be key building blocks in future device architectures.
No takes yet. Share an insight, caveat, or question.
Dankert et al. (2016) studied this question.