A new method based on focused ion beam micromachining of optoelectronic semiconductor microdevices for cross-sectional transmission electron microscope analyses has been developed. Electron transparent areas in excess of 200 μm2 have been fabricated. These enabled an investigation of the origins of structural defects in a prespecified submicron-sized region of GaInP/AlGaInP-based semiconductor laser diodes.
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Szot et al. (1992) studied this question.