Silicon is now the most important material in modern solid-state electronics. Regular systems of silicon nanoclusters containing up to 10 14 cm −3 elements were obtained in a sublattice of opal (SiO 2 ) voids. By using three-dimensional dielectric matrix-carriers similar to opal, it may be possible to obtain three-dimensional ensembles of semiconductor nanodevices. Various parameters of these “opal-silicon” nanocomposites were measured.
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Bogomolov et al. (1998) studied this question.
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