Graphene growth using propane‐hydrogen CVD on 6H‐SiC(0001): temperature dependent interface and strain

Graphene growth on SiC using propane‐hydrogen CVD has been recently demonstrated. In contrast to the annealing method, in‐plane rotational disorder of graphene can be observed on SiC(0001). In this contribution, we study the effects of growth temperature on the interface between graphene and SiC. We show that growth temperature allows to control the formation of graphene with in‐plane disorder or graphene on a (6√3×6√3)‐R30° interface. Accordingly, grazing incidence X‐ray diffraction evidences an effect of growth temperature on in‐plane strain. These results are discussed on the basis of the hydrogenation of the SiC surface. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)