A silicon-nanocrystal (nc-Si) based metal-oxide-semiconductor light-emitting diode (MOSLED) on Si nanopillar array with size, height, and density of 30nm, 350nm, and 2.8×1010cm−2, respectively, is characterized. The nanopillar roughened Si surface contributes to the improved turn-on characteristics by enhancing Fowler-Nordheim tunneling and reducing effective barrier height, providing the MOSLED a maximum optical power of 0.7μW obtained at biased current of 375μA. The optical intensity, turn-on current, and power-current slope of nc-Si MOSLED on high-aspect-ratio Si nanopillar array are 140μW∕cm2, 5μA, 2±0.8mW∕A, respectively. A maximum external quantum efficiency of 0.1% is reported.
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Lin et al. (2007) studied this question.
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