The structural and chemical details of GeO2∕Ge layers grown on In0.15Ga0.85As substrates by molecular beam deposition were studied in situ by diffraction and spectroscopic techniques. The formation of semiconductor-oxygen bonds at the Ge∕In0.15Ga0.85As interface, which may play a decisive role in dictating the quality of the Ge passivation, was assessed after using two different surface preparations, namely Ar sputtering and atomic hydrogen cleaning.
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Molle et al. (2008) studied this question.
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