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April 1, 2009Japanese Journal of Applied Physics

Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface

Rihito Kuroda Akinobu Teramoto Yukihisa Nakao Tomoyuki Suwa Masahiro Konda Rui Hasebe Xiang Li Tatsunori Isogai Hiroki Tanaka Shigetoshi Sugawa Tadahiro Ohmi

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Abstract

Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface, Kuroda, Rihito, Teramoto, Akinobu, Nakao, Yukihisa, Suwa, Tomoyuki, Konda, Masahiro, Hasebe, Rui, Li, Xiang, Isogai, Tatsunori, Tanaka, Hiroaki, Sugawa, Shigetoshi, Ohmi, Tadahiro

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Cite This Study

Kuroda et al. (2009) studied this question.

synapsesocial.com/papers/6aacfbc33e7ddcb2ceff8450 https://doi.org/10.1143/jjap.48.04c048

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