Indium Diffusion in Aluminum

Six measurements of ¹¹⁴In diffusion in single crystals of 99.999% pure Al have been made in the range 440-660 ^∘{}C. A least-mean-squares analysis of the data leads to the expression D=1.16e^-(1.27eV)kT cm²{sec}^{{-}1}$. The activation energy is similar to that found for the diffusion of other nontransition solutes in Al and does not therefore appear to reflect an exceptionally large In-vacancy binding energy in Al, such as was found by quenching experiments.