Temperature Dependence of Electrical Resistivity of Dislocation in Aluminum

The temperature dependence of electrical resistivity of dislocation in pure aluminum has been studied experimentally. In the case of pure aluminum, the ratio of the dislocation resistivity at room temperature to that at liquid nitrogen temperature increases from 1.0 to 1.2 with decreasing dislocation density. A discussion is given on this change in the resistivity ratio. It is concluded that the dislocation resistivity due mainly to the core of a dislocation and to the strain field rather than a stacking fault ribbon, and the strain field which contributes to the temperature dependent part of the dislocation resistivity is estimated to be about 200 Å in radius.