Zn 1- x Cd x O films were grown on a -plane (1120) sapphires by remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The growth temperature, the group-II flow ratio R , and RF power are important parameters for the growth of Zn 1- x Cd x O films by RPE-MOCVD. R is defined as the molar function of [DMCd/(DEZn+DMCd)]. We discuss typical growth features associated with RPE-MOCVD and the refractive indices of wurtzite-type films. The band gap energy of Zn 1- x Cd x O grown at 350 °C can be controlled from 3.3 down to 1.8 eV. The refractive index is measured by ellipsometry at 1.96 eV and is found to vary from 2.07 to 2.78.
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Ohashi et al. (2007) studied this question.
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