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Data are presented showing that a p–n InP–In0.5Ga0.5P–In0.5(Al0.3Ga0.2)P–In0.5Al0.5P quantum-dot (QD) heterostructure diode, with an auxiliary ∼20 Å InGaP quantum well (QW) coupled via an In(AlGa)P barrier (∼20 Å) to the single layer of QDs to aid carrier collection, has a steeper current–voltage characteristic than the case of a similar diode with no auxiliary QW. The p–n InP+InGaP QD+QW diode is capable of 300 K visible-spectrum QD laser operation, while the single-layer InP QD diode (single QD layer) saturates at low current (≲1 mA) and does not exhibit stimulated emission.
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Walter et al. (2001) studied this question.
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