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The effect of spatially non-uniform accumulation of carriers in the optical confinement layer of broad-waveguide InGaAs/GaAs/AlGaAs-based ultra-high power lasers operating at 1.06 µm under very high pulsed pumping has been analysed and shown to be an important limitation for the output power. A calculation using a semi-analytical theory is in good agreement with the recently published experimental data. A narrow asymmetric waveguide laser construction is predicted to alleviate the problem.
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Ryvkin et al. (2006) studied this question.
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