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An investigation was made on the infrared absorption spectra of gallium phosphide single crystals doped with different impurities in the temperature range from 90 to 420°K. With decreasing temperature a transformation of the absorption spectrum due to interband transitions between conduction band valleys to the absorption spectrum due to impurity states was observed. On the basis of a theoretical analysis of the results obtained, a number of parameters of the GaP band structure and impurity states characteristics have been determined.
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Pikhtin et al. (1969) studied this question.
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