A wideband coplanar to inverted microstrip transition is developed for a low-loss and low-cost inverted line on silicon. The measurements and simulation results are presented. The measured performance of the back-to-back transitions exhibits an insertion loss of less than 0.4 dB and a return loss better than 13.5 dB over a bandwidth from 1 to 18 GHz. The simulation and measurement results agree closely.
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Martoglio et al. (2005) studied this question.
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