Investigation of Ge film growth on the Si(100) surface by recording diffractometry

A diagram of the structural and morphological state of a Ge film on a Si(100) surface is constructed using in situ recording of the reflection high-energy electron diffraction patterns. The diagram involves the following regions: the continuous film, hut-and dome-shaped clusters, and dome-shaped clusters with misfit dislocations at the interface. The variation in the lattice parameters of the Ge film during MBE growth on the Si(100) surface is measured for the first time, and the oscillations of the variation in the lattice parameter for the (100) plane during two-dimensional layer-by-layer growth are found.