It is shown that an α→β transformation can be induced in reaction‐bonded silicon carbide by high‐temperature annealing in high nitrogen pressures. The transformation is the reverse of that commonly observed during high‐temperature processing of SiC compacts and is accompanied by the formation of substantial amorphous grain‐boundary films, suggesting a possible liquid‐phase transformation mechanism .
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Jepps et al. (1981) studied this question.
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