Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature

A study of damage depth distribution in Si by elevated temperature O+-ion implantation was performed using three structures: (i) bulk Si, (ii) Si∕SiO2∕bulk Si, and (iii) SiO2∕bulk Si. The samples were implanted at 250 °C with a dose of 5×1016cm−2 at an energy of 185 keV. By this approach, the damage depth profile distributes along the SiO2 and Si layers in a different manner according to the sample structure. A comparative analysis of the high-resolution x-ray diffraction spectra taken from the implanted samples permitted us to infer on the spatial separation between vacancy and interstitial-rich layers, which are associated with the presence of negative and positive strained layers, respectively.