Answers are grounded in this paper and cite their sources.
The transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n+-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.
No takes yet. Share an insight, caveat, or question.
Fan et al. (1997) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: