We present a new low-temperature atomic layer deposition (ALD) process based on Mn 2 (CO) 10 and ozone as precursors to fabricate crystalline α-Mn 2 O 3 and Mn 3 O 4 thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60–100 °C and the latter in the range 120–160 °C.
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Jin et al. (2016) studied this question.