Bi 1.5 Zn 1.0 Nb 1.5 O 7 (BZN) epitaxial thin films were prepared on (111)Pt∥(001)Al 2 O 3 substrates at 500°C by metal organic chemical vapor deposition (MOCVD). The electrical properties of the as-deposited films were investigated by comparing them with those of the (111)-one-axis-oriented films prepared on (111)Pt/TiO 2 /SiO 2 /(100)Si substrates for making a Pt/BZN/Pt capacitor structure. The relative dielectric constant of the epitaxial film was almost the same as that of the one-axis-oriented one, but its changes with frequency dependence and tan δ were smaller than those of the one-axis-oriented one.
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Okaura et al. (2005) studied this question.
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