A system is described using near infrared dark-field microscopy (DFM) for the analysis of defects in III-V compound materials. The microscope uses a halogen bulb light source and a silicon vidicon camera detector. High-contrast images of defects are shown as bright detail on a dark background. For the same view, DFM gives image detail contrast as high as 100%, compared with 25% in bright-field illumination. Digital image processing is used for improving the presentation of results. Individual point scatterers of 0.5-3 mu m in size, interpreted as being due to microprecipitates decorating dislocations, are shown in various substrates of GaAs.
No takes yet. Share an insight, caveat, or question.
Montgomery et al. (1990) studied this question.
Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context: