Radiation resistance of 4H-SiC Schottky diodes under irradiation with 0.9-MeV electrons

Degradation of the parameters of 4 H -SiC Schottky diodes after irradiation with 0.9-MeV electrons is studied. A charge-carrier removal rate of 0.07–0.09 cm –1 is determined. The Schottky diodes under investigation are shown to retain rectifying current-voltage characteristics up to doses of ~10 17 cm –2 . The radiation resistance of SiC Schottky diodes is found to be much greater than that of Si p–i–n -diodes with the same breakdown voltage.