Answers are grounded in this paper and cite their sources.
The surface morphology of MBE-grown Be-doped GaAs was studied by RHEED, SEM and TEM. {411}A facets were found on the (100) surface for Be 6×1019 cm-3 doping at a growth temperature of 630°C. The surface roughness due to this faceting was suppressed by misorienting the GaAs substrate from (100) toward (111)A; a 19.5° misorientation, i.e., a (411)A substrate, was found to be effective in realizing a smooth surface, even for Be 1×1020 cm-3 doping.
No takes yet. Share an insight, caveat, or question.
Mochizuki et al. (1990) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: