The fundamental properties of In0.2Ga0.8As/GaAs strained-layer quantum-wells (QWs) grown on (311)A GaAs substrates were studied. The radiative and nonradiative recombination rates as a function of temperature were obtained from the photoluminescence (PL) spectra and the time-resolved PL measurements. The radiative recombination rate is enhanced in (311)-oriented QW structures as compared to (100)-oriented ones. We fabricated graded-index separate-confinement heterostructure double quantum-well lasers on (311)A GaAs substrates. We demonstrate the low threshold current density of 360 A/cm2 for a 1.17 mm long laser at room temperature.
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Takahashi et al. (1995) studied this question.
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