Low-lying electronic states ionization potential for ethylsilylene

The equilibrium geometries for ground and low-lying excited states for C2H5SiH, and the ground state for C2H5SiH+ have been optimized at the UHF/3–21 G and UHF/6–31 G* levels of theory. Computed electronic excitation energies, along with the adiabatic ionization potential for C2H5SiH have been calculated at the PUMP4/6–31 G* level of theory.