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A compact, high-power emitter of half-cycle terahertz (THz) radiation is demonstrated. The device consists of an epitaxial InAs emitter upon a GaAs prism and produces THz pulses that are 20 times more powerful than those from conventional planar InAs emitters. This improvement is a direct result of reorienting the transient THz dipole such that its axis is not perpendicular to the emitting surface.
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Johnston et al. (2002) studied this question.
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