The nonvolatile-memory (NVM) characteristics of AlO--implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al2O3, and our calculations show that these levels are likely attributed to the defects in the Al2O3, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.
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Kim et al. (2009) studied this question.
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