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A phenomenological theory is given for the interaction of free charge carriers with localized spins in an antiferromagnetic semiconductor. Deviations of the spin system from the normal isotropic equilibrium distribution, induced by the motion of the charge carriers, are taken into account. The theory is used with success for the interpretation of the electrical resistivity, the thermoelectric power (magnon-drag contribution), and the optical properties of the antiferromagnetic semiconductor MnTe.
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Zanmarchi et al. (1968) studied this question.
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