Structural, optical, and electrical properties of PbSe films prepared by chemical “organic” (COD) and “anorganic” (CAD) deposition and by vacuum evaporation (VE) techniques are investigated in the initial state and during thermal annealing in air (TA). The effects of TA on crystalline structure and on the phase composition of the films are analysed. The presence of PbSeO3 explains most of the changes produced by TA in the transmission and reflection spectra and in the resistivity- temperature behavior of the films. No important differences are found between the fundamental properties of the three types of films and their behavior during TA, this suggesting the possible use of CAD-PbSe films as IR sensors.
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Cândea et al. (1987) studied this question.
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