On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition

Introduction In order to keep pace with CMOS scaling trends, alternative gate oxide materials, with a high dielectric constant, were proposed. To have a low interface trap density, good mobility [1], and good Atomic Layer Deposition (ALD) growth characteristics [2], the presence of an interfacial oxide layer is still prerequisite. Hydroxyl groups are the key players for the initiation of the ALD reaction [3]. In this work the application of downscaled ozone based wet chemical oxide as a surface pretreatment for ALD high-k deposition is examined.