Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction

Nitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junction was subsequently formed by postimplantation annealing in air. Deep level transient spectroscopy was used to investigate deep level defects induced by N+ implantation and the effect of air annealing. The N+ implantation enhanced the electron trap at E C -(0.31±0.01) eV (E3) and introduced another one at E C -(0.95±0.02) eV (D1), which were removed after annealing at 900 and 750 °C, respectively. Another trap D2 (Ea =0.17±0.01 eV) was formed after the 750 °C annealing and persisted at 1200 °C.