We present experimental result on spatially and spectrally resolved imaging of GaAs quantum dot (QD) structures using a near-field optical microscope. Three photoluminescence (PL) peaks which originate from QD, quantum well (QW), and bulk regions were observed at liquid-He temperature. Carriers were observed to diffuse effectively from the AlGaAs barriers to the QD and QW regions. The region of the intension carrier capture manifests itself by emitting a sharp PL peak, and is estimated to be about 300 nm.
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Toda et al. (1996) studied this question.