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October 5, 2009Applied Physics Letters

Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1−xGex/Si substrate

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HTH. TanotoAgency for Science, Technology and ResearchSYS. F. YoonMichigan State UniversityKLK. L. LewUniversiti Tunku Abdul Rahman

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Tanoto et al. (2009) studied this question.

synapsesocial.com/papers/6aae0e2eacef0af25695aff3https://doi.org/10.1063/1.3243984
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