Ab initio study of carrier mobility of few-layer InSe

On the basis of the density functional theory coupled with the Boltzmann transport equation with relaxation time approximation, we investigate the electronic structure and predict the electron mobility of few-layer InSe. Few-layer InSe has a tunable band gap on thickness. At the same time, it possesses a high carrier mobility on the order of 103 cm2 V−1 s−1. As we demonstrated, few-layer InSe has potential applications for next-generation electronic materials owing to its considerable band gap and high carrier mobility.