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This paper reports a direct determination of the relative, static permittivity of the atomic lattice of InSb at 77°K. The measurements were performed on relatively pure (ND≤1014 cm−3) n-type single-crystal samples at 70.1 GHz by utilizing a strong magnetic field (∼40 kG) to immobilize the charge carriers in a direction parallel to the applied TE01°-mode electric field. In this manner, the rf losses normally associated with ``drift'' motion of the charge carriers were made negligible, thus permitting the lattice component of the permittivity to be accurately resolved. The measured relative value, εs=17.78±0.15, compares favorably with several values previously calculated from measurements of the ir reststrahlen spectrum.
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Glover et al. (1969) studied this question.
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