The relation between the growth rates of slip bands in depth (S) and in length (vL) as resolved by high speed cinematography on the front surface of n-irradiated Cu crystals is used to determine the mean distance d (or local mobile density) of dislocations within the moving dislocation groups. Typical values are vL = 3 mm/s, d = 0.35 μm. The observations suggest that vL approximates the velocity of screw dislocations emerging from source regions near the surface. The effective free activation enthalpy ΔG deduced directly from vL agrees closely with the value determined indirectly from measurements of the CRSS.
No takes yet. Share an insight, caveat, or question.
Neuhäuser et al. (1974) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: