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We study the magnetic properties of Fe thin films epitaxially grown on GaAs (001) for a large range of substrate temperature. Magnetization deficiency has been detected and studied. Its dependence with both thickness and temperature clearly show the existence of a nearly half-magnetized phase at the interface, covered by “as-bulk” Fe. In order to inhibit this interdiffusion, we study several methods. Using previous O3 oxidation of GaAs, the Fe layer is fully magnetized even for deposition at 200 °C.
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Filipe et al. (1997) studied this question.
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