This article presents a method of transistor parameter extraction using multiharmonic Load‐Pull (MHLP) measurements completed with modified harmonic balance calculations. An advantage of this approach is that the parameters of the nonlinear elements of the transistor are obtained solely from large‐signal measurements at the fundamental and the generated harmonic frequencies. The calculated parameters of the nonlinear model of a commercial MESFET (NE 71083), are found suitable for large‐signal operating mode at different impedance loading.
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Hajji et al. (1992) studied this question.