The recombination properties of dislocation trails formed behind moving dislocations in plastically deformed Si have been investigated by the electron beam induced current and laser beam induced current methods. It is found that for dislocations moving with a velocity lower than 10 –5 cm/s the contrast of dislocation trails does not noticeably depend on the velocity value. It is shown that the dislocation type is not unique parameter determining the recombination activity of defects in the dislocation trails. A dislocation bending in near surface layers is found also to affect the defect formation in the dislocation trails. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Feklisova et al. (2015) studied this question.