The recombination efficiency of separate dislocations and crystal areas swept by them is studied by the electron beam induced current (EBIC) method in plastically deformed silicon. It is found that the EBIC-contrast of slip planes may exceed the contrast of dislocations themselves. Slip plane contrast is observed to depend on beam current. The data obtained may be explained on the assumption that there is an electrostatic barrier closeto the quasi-two-dimensional defect, i.e. the dislocation slip plane.
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Bondarenko et al. (1986) studied this question.
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